IJE TRANSACTIONS B: Applications Vol. 31, No. 5 (May 2018) 712-718    Article in Press

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S. Rastani and H. Babai
( Received: July 12, 2017 – Accepted in Revised Form: January 14, 2018 )

Abstract    Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The physical aspects of the yielded dielectrics such as layer thickness and uniformity are presented as well.


Keywords    Plasma Deposition; Thin Film Transistor; Display; Process Optimization; Low Temperature Dielectric


چکیده    دی الکتریک لازم برای گیت پلی سیلیکان ترانزیستور های لایه نازک نمایشگرها ی مسطح تهیه و فرآیند ساخت بهینه سازی گردیده است. از پلاسمای گازهای سیلان و اکسید نیتروژن برای ساخت اکسید سیلیسیوم در دمایی پایین تر از 150 درجه سانتیگراد استفاده شده است. شرایط لایه نشانی و پارامتر های عملیاتی سیستم مانند فشار، دما، نسبت شار گازها، شار کل و توان پلاسما مورد مطالعه و اثر هر کدام مورد بحث قرار گرفته است. همچنین خواص فیزیکی دی الکتریک بدست آمده نظیر قطر لایه و یکنواختی آن ارائه گردیده است.


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