Abstract




 
   

IJE TRANSACTIONS B: Applications Vol. 30, No. 11 (November 2017) 1288-1297    Article in Press

PDF URL: http://www.ije.ir/Vol30/No11/B/1.pdf  
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  HOPPING CONDUCTIVITY IN SINGLE CRYSTALS (CD0.6ZN0.32MN0.08)3AS2 (RESEARCH NOTE)
 
 
( Received: October 20, 2016 – Accepted: September 08, 2017 )
 
 

Abstract    Applying Bridgman method it was obtained that tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc. Measurements of the temperature dependence of conductivity and magnetoresistance in the temperature range of 1.6K to 300K and in magnetic field up to 25 T were carried out. Close to helium temperatures it is set to a range of implementation of Mott\\\'s variable-range hopping conductivity mechanism. It was determined that the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers.

 

Keywords    single crystals, solid solutions, hopping conductivity, Dirac semimetal.

 

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