Abstract




 
   

IJE TRANSACTIONS B: Applications Vol. 32, No. 5 (May 2019) 720-725   

PDF URL: http://www.ije.ir/Vol32/No5/B/14-3081.pdf  
downloaded Downloaded: 14   viewed Viewed: 61

  ENERGY EFFICIENT NOVEL DESIGN OF STATIC RANDOM ACCESS MEMORY MEMORY CELL IN QUANTUM-DOT CELLULAR AUTOMATA APPROACH
 
S. Kassa and S. Nema
 
( Received: December 22, 2018 – Accepted in Revised Form: May 02, 2019 )
 
 

Abstract    This paper introduces a peculiar approach of designing Static Random Access Memory (SRAM) memory cell in Quantum-dot Cellular Automata (QCA) technique. The proposed design consists of one 3-input MG, one 5-input MG in addition to a (2×1) Multiplexer block utilizing the loop-based approach. The simulation results reveals the excellence of the proposed design. The proposed SRAM cell achieves 16% and 15% improvement in terms of total number of Cell counts and Area. Similarly, the proposed design structure realizes the overall power dissipation savings up to 35.3% at maximum energy dissipation of circuit, 38.6% at average energy dissipation of circuit, 36.1% at minimum energy dissipation of circuit, 36.4% at average energy dissipation of circuit and 40.1% at average switching energy dissipation compared to the latest reported designs. The power analysis and structural analysis of the proposed design is compared with its state-of-the-art counterpart designs, using QCAPro and QCADesigner 2.0.3 tools. The proposed QCA based SRAM cell design can be taken as a base design in building an ultra-low power information generating systems like Microprocessors.

 

Keywords    Quantum-dot Cellular Automata; Inverter; Majority Gate; Static Random Access Memory

 

چکیده   

این مقاله روشی خاص را برای طراحی سلول حافظه SRAM در روش کوانتوم دات (Quantum-dot Cellular Automata) معرفی می‌کند. طرح پیشنهادی شامل یک MG با 3 ورودی، یک MG با 5 ورودی به علاوه یک بلوک مالتی پلکسر (2 × 1) با استفاده از رویکرد مبتنی بر حلقه است. نتایج شبیه‌سازی بیانگر برتر بودن طراحی پیشنهادی است. سلول پیشنهادی SRAM به میزان 16 و 15 درصد از نظر تعداد کل شماره سلول‌ها و مساحت بهبود یافته است. به طور مشابه، ساختار طراحی پیشنهادی، صرفه‌جویی در مصرف توان را به میزان 3/35% در حداکثر اتلاف انرژی مدار، 6/38% در اتلاف انرژی متوسط مدار، 1/36% در حداقل اتلاف انرژی مدار، 4/36% در تخلیه انرژی متوسط مدار و 1/40% از میانگین تلفات انرژی سوئیچینگ در مقایسه با آخرین طرح‌های گزارش‌شده محقق کرده است. تجزیه و تحلیل توان و ساختاری طراحی پیشنهادی با طرح‌های همتای آن تاکنون، با استفاده از ابزار QCAPro و QCADesigner 2.0.3 مقایسه شده است. طرح سلولی SRAM مبتنی برQCA می‌تواند به عنوان یک طراحی پایه در ساخت یک سیستم تولیدکننده اطلاعات فوق‌العاده کم توان مانند ريزپردازنده ها مورد استفاده قرار گیرد.

References   

1. Yang, T., Kiehl, R. A., and Chua, L. O., “Tunneling phase logic cellular nonlinear networks”, International Journal of Bifurcation and Chaos, Vol. 11, No. 12, (2001), 2895–2911. 
2. Likharev, K. K., “Single-electron devices and their applications”, Proceedings of the IEEE, Vol. 87, No. 4, (1999), 606–632. 
3. Martel, R., Schmidt, T., Shea, H.R., Hertel, T., and Avouris, P., “Single- and multi-wall carbon nanotube field-effect transistors”, Applied Physics Letters, Vol. 73, No. 17, (1998), 2447–2449. 
4. Lent, C. S., Tougaw, P. D., and Porod, W., “Quantum cellular automata: the physics of computing with arrays of quantum dot molecules”, In Proceedings Workshop on Physics and Computation, Dallas, USA, IEEE, (1994), 5–13. 
5. Tougaw, P. D., “A device architecture for computing with quantum dots”, Proceedings of the IEEE, Vol. 85, No. 4, (1997), 541-557.
6. Kassa, S. R., and Nagaria, R. K., “A novel design of quantum dot cellular automata 5-input majority gate with some physical proofs”, Journal of Computational Electronics, Vol. 15, No. 1, (2016), 324–334.
7. Kassa, S. R. and Nagaria, R. K., “A Novel Design for 4-Bit Code Converters in Quantum Dot Cellular Automata”, Journal of Low Power Electronics, Vol. 13, No. 3, (2017), 482–489. 
8. Zoka, S. and Gholami, M., “Two Novel D-Flip Flops with Level Triggered Reset in Quantum Dot Cellular Automata Technology”, International Journal of Engineering - Transactions C: Aspects, Vol. 31, No. 3, (2017), 415–421. 
9. Kassa, S. R., Nagaria, R. K., and Karthik, R., “Energy efficient neoteric design of a 3-input Majority Gate with its implementation and physical proof in Quantum dot Cellular Automata”, Nano Communication Networks, Vol. 15, (2018), 28–40. 
10. Fazzion, E., Fonseca, O.L., Nacif, J.A.M., Neto, O.P.V., Otavio, A., and Silva, D.S., “A Quantum-Dot Cellular Automata Processor Design”, In Proceedings of the 27th Symposium on Integrated Circuits and Systems Design - SBCCI ’14, New York, USA, ACM Press, (2014), 1–7. 
11. Kianpour, M. and Sabbaghi-Nadooshan, R., “A Novel Quantum-Dot Cellular Automata X-bit×32-bit SRAM”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 24, No. 3 (2015), 827-836.
12. Angizi, S., Sarmadi, S., Sayedsalehi, S., and Navi, K, “Design and evaluation of new majority gate-based RAM cell in quantum-dot cellular automata”, Microelectronics Journal, Vol. 46, No. 1, (2015), 43–51. 
13. Sen, B., Dutta,  M., Goswami, M., and Sikdar, B. K.,  “Modular Design of testable reversible ALU by QCA multiplexer with increase in programmability”, Microelectronics Journal, Vol. 45, No. 11, (2014), 1522–1532. 
14. Hashemi, S. and Navi, K., “New robust QCA D flip flop and memory structures”, Microelectronics Journal, Vol. 43, No. 12, (2012), 929–940. 
15. Dehkordi, M. A., Shamsabadi, A. S., Ghahfarokhi, B. S., and Vafaei, A., “Novel RAM cell designs based on inherent capabilities of quantum-dot cellular automata”, Microelectronics Journal, Vol. 42, No. 5, (2011), 701–708. 
16. Walus, K., Dysart, T.J., Jullien, G.A., and Budiman, R.A., “QCADesigner: A Rapid Design and Simulation Tool for Quantum-Dot Cellular Automata”, IEEE Transactions on Nanotechnology, Vol. 3, No. 1, (2004), 26-31.
17. Srivastava, S., Asthana, A., Bhanja, S., and Sarkar, S., “QCAPro - An error-power estimation tool for QCA circuit design”, In IEEE International Symposium of Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, IEEE, (2011), 2377–2380.


Download PDF 



International Journal of Engineering
E-mail: office@ije.ir
Web Site: http://www.ije.ir