IJE TRANSACTIONS A: Basics Vol. 31, No. 7 (July 2018) 1038-1043    Article in Press

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N. Gupta, J. K. B Patel and A. K. Raghav
( Received: November 13, 2017 – Accepted in Revised Form: March 09, 2018 )

Abstract    A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The effect on TDCR is analyzed for variations in device parameters like oxide thickness, silicon thickness, channel doping concentration, channel length and drain bias.The results show that larger value of gm/Id can be obtained in proposed device in comparison to other existing triple material structures which makes it suitable for micropower applications. The analytical results of the developed gm/Id model strongly agrees with the simulated results obtained from TCAD Silvaco.


Keywords    Short Channel Effects; Triple Metal; Dual Dielectric material; Halo Implant; Transconductance


چکیده    یک مدل MOSFET با یک دیود الکترومغناطیسی سه گانه dual-hialo-gate-all-around / gateway (DH-DD-TM-CGAA / SG) پیشنهاد شده است و یک مدل تحلیلی برای نسبت جریان فعلی به تخلیه (TDCR ) توسعه داده شده است. ترکیب دوگانه با مواد دو الکتریکی و سه بعدی موجب افزایش عملکرد دستگاه از لحاظ بهبود TDCR می شود. در اثر TDCR برای تغییرات در پارامترهای دستگاه مانند ضخامت اکسید، ضخامت سیلیکون، غلظت doping کانال، طول کانال و تخریب تخلیه تجزیه و تحلیل شده است. نتایج نشان می دهد که مقدار بزرگتر از gm/Id در دستگاه پیشنهادی در مقایسه با سایر سه گانه موجود ساختارهای مادی است که آن را برای برنامه های کاربردی میکرودرمی مناسب می سازد. نتایج تحلیلی مدل gm/Id توسعه یافته به شدت با نتایج شبیه سازی شده از TCAD Silvaco موافق است.


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